In‐Grain Ferroelectric Switching in Sub‐5 nm Thin Al(0.74)Sc(0.26)N Films at 1 V

Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub‐5 nm thin Al(0.74)Sc(0.26)N films grown on Pt/Ti/...

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Detalles Bibliográficos
Autores principales: Schönweger, Georg, Wolff, Niklas, Islam, Md Redwanul, Gremmel, Maike, Petraru, Adrian, Kienle, Lorenz, Kohlstedt, Hermann, Fichtner, Simon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477852/
https://www.ncbi.nlm.nih.gov/pubmed/37382398
http://dx.doi.org/10.1002/advs.202302296

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477852/
https://www.ncbi.nlm.nih.gov/pubmed/37382398
http://dx.doi.org/10.1002/advs.202302296

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