Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit p...

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Detalles Bibliográficos
Autores principales: Chen, Bin, Wang, Xue‐Peng, Jiao, Fangying, Ning, Long, Huang, Jiaen, Xie, Jiatao, Zhang, Shengbai, Li, Xian‐Bin, Rao, Feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477879/
https://www.ncbi.nlm.nih.gov/pubmed/37377084
http://dx.doi.org/10.1002/advs.202301043

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10477879/
https://www.ncbi.nlm.nih.gov/pubmed/37377084
http://dx.doi.org/10.1002/advs.202301043

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