Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device...

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Detalles Bibliográficos
Autores principales: Liang, Yuhan, Yi, Di, Nan, Tianxiang, Liu, Shengsheng, Zhao, Le, Zhang, Yujun, Chen, Hetian, Xu, Teng, Dai, Minyi, Hu, Jia-Mian, Xu, Ben, Shi, Ji, Jiang, Wanjun, Yu, Rong, Lin, Yuan-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10482861/
https://www.ncbi.nlm.nih.gov/pubmed/37673896
http://dx.doi.org/10.1038/s41467-023-41163-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10482861/
https://www.ncbi.nlm.nih.gov/pubmed/37673896
http://dx.doi.org/10.1038/s41467-023-41163-3

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