The electronic properties of boron-doped germanium nanocrystals films

Various doping concentrations of boron (B)-doped germanium nanocrystal (Ge NC) films were prepared using the plasma-enhanced chemical vapor deposition (PECVD) technique followed by thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural charac...

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Detalles Bibliográficos
Autores principales: Shan, Dan, Wang, Menglong, Sun, Daoyuan, Cao, Yunqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10484877/
https://www.ncbi.nlm.nih.gov/pubmed/37676446
http://dx.doi.org/10.1186/s11671-023-03893-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10484877/
https://www.ncbi.nlm.nih.gov/pubmed/37676446
http://dx.doi.org/10.1186/s11671-023-03893-7

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