Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique

In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films a...

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Detalles Bibliográficos
Autores principales: Fakhri, Makram A., Jabbar, Haneen D., AbdulRazzaq, Mohammed Jalal, Salim, Evan T., Azzahrani, Ahmad S., Ibrahim, Raed Khalid, Ismail, Raid A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10485076/
https://www.ncbi.nlm.nih.gov/pubmed/37679411
http://dx.doi.org/10.1038/s41598-023-41396-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10485076/
https://www.ncbi.nlm.nih.gov/pubmed/37679411
http://dx.doi.org/10.1038/s41598-023-41396-8

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