Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was pe...

Descripción completa

Detalles Bibliográficos
Autores principales: Shamakhov, Viktor, Slipchenko, Sergey, Nikolaev, Dmitriy, Smirnov, Alexander, Eliseyev, Ilya, Grishin, Artyom, Kondratov, Matvei, Shashkin, Ilya, Pikhtin, Nikita
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489628/
https://www.ncbi.nlm.nih.gov/pubmed/37686894
http://dx.doi.org/10.3390/nano13172386

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489628/
https://www.ncbi.nlm.nih.gov/pubmed/37686894
http://dx.doi.org/10.3390/nano13172386

Ejemplares similares