Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

Metal-oxide-semiconductor (MOS)-based thin-film transistors (TFTs) are gaining significant attention in the field of flexible electronics due to their desirable electrical properties, such as high field-effect mobility (μ(FE)), lower I(OFF), and excellent stability under bias stress. TFTs have wides...

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Detalles Bibliográficos
Autores principales: Chang, Yeoungjin, Bukke, Ravindra Naik, Bae, Jinbaek, Jang, Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489735/
https://www.ncbi.nlm.nih.gov/pubmed/37686917
http://dx.doi.org/10.3390/nano13172410

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489735/
https://www.ncbi.nlm.nih.gov/pubmed/37686917
http://dx.doi.org/10.3390/nano13172410

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