Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO(2))-based resistive random-access memories (RRAMs). CeO(2) is considered the most promising candidate because of its multiple oxidation states (Ce(3+) and Ce(4+)), remarkable resistive-switchin...

Descripción completa

Detalles Bibliográficos
Autores principales: Ali, Sarfraz, Ullah, Muhammad Abaid, Raza, Ali, Iqbal, Muhammad Waqas, Khan, Muhammad Farooq, Rasheed, Maria, Ismail, Muhammad, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489950/
https://www.ncbi.nlm.nih.gov/pubmed/37686950
http://dx.doi.org/10.3390/nano13172443

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489950/
https://www.ncbi.nlm.nih.gov/pubmed/37686950
http://dx.doi.org/10.3390/nano13172443

Ejemplares similares