(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

Aluminium Gallium Nitride (Al(y)Ga(1-y)N) quantum dots (QDs) with thin sub-µm Al(x)Ga(1-x)N layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface r...

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Detalles Bibliográficos
Autores principales: Zaiter, Aly, Nikitskiy, Nikita, Nemoz, Maud, Vuong, Phuong, Ottapilakkal, Vishnu, Sundaram, Suresh, Ougazzaden, Abdallah, Brault, Julien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489961/
https://www.ncbi.nlm.nih.gov/pubmed/37686912
http://dx.doi.org/10.3390/nano13172404

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10489961/
https://www.ncbi.nlm.nih.gov/pubmed/37686912
http://dx.doi.org/10.3390/nano13172404

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