Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System

In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is ac...

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Detalles Bibliográficos
Autores principales: Ju, Dongyeol, Kim, Sunghun, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490079/
https://www.ncbi.nlm.nih.gov/pubmed/37686985
http://dx.doi.org/10.3390/nano13172477

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490079/
https://www.ncbi.nlm.nih.gov/pubmed/37686985
http://dx.doi.org/10.3390/nano13172477

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