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Modeling Signal-to-Noise Ratio of CMOS Image Sensors with a Stochastic Approach under Non-Stationary Conditions

A stochastic model for characterizing the conversion gain of Active Pixel Complementary metal–oxide–semiconductor (CMOS) image sensors (APS), assuming stationary conditions was recently presented in this journal. In this study, we extend the stochastic approach to non-stationary conditions. Non-stat...

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Detalles Bibliográficos
Autores principales: Cherniak, Gil, Nemirovsky, Jonathan, Nemirovsky, Amikam, Nemirovsky, Yael
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490096/
https://www.ncbi.nlm.nih.gov/pubmed/37687800
http://dx.doi.org/10.3390/s23177344