Sol–Gel-Processed Y(2)O(3)–Al(2)O(3) Mixed Oxide-Based Resistive Random-Access-Memory Devices

Herein, sol–gel-processed Y(2)O(3)–Al(2)O(3) mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y(2)O(3) and Al(2)O(3) precursors were fabricated on indium tin oxide/glass substrates. The corresponding structural, chemical, and electrical prope...

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Detalles Bibliográficos
Autores principales: Kim, Hae-In, Lee, Taehun, Cho, Yoonjin, Lee, Sangwoo, Lee, Won-Yong, Kim, Kwangeun, Jang, Jaewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490390/
https://www.ncbi.nlm.nih.gov/pubmed/37686969
http://dx.doi.org/10.3390/nano13172462

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490390/
https://www.ncbi.nlm.nih.gov/pubmed/37686969
http://dx.doi.org/10.3390/nano13172462

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