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Sol–Gel-Processed Y(2)O(3)–Al(2)O(3) Mixed Oxide-Based Resistive Random-Access-Memory Devices
Herein, sol–gel-processed Y(2)O(3)–Al(2)O(3) mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y(2)O(3) and Al(2)O(3) precursors were fabricated on indium tin oxide/glass substrates. The corresponding structural, chemical, and electrical prope...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490390/ https://www.ncbi.nlm.nih.gov/pubmed/37686969 http://dx.doi.org/10.3390/nano13172462 |