Sol–Gel-Processed Y(2)O(3) Multilevel Resistive Random-Access Memory Cells for Neural Networks

Yttrium oxide (Y(2)O(3)) resistive random-access memory (RRAM) devices were fabricated using the sol–gel process on indium tin oxide/glass substrates. These devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. The effect of current compliance...

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Detalles Bibliográficos
Autores principales: Lee, Taehun, Kim, Hae-In, Cho, Yoonjin, Lee, Sangwoo, Lee, Won-Yong, Bae, Jin-Hyuk, Kang, In-Man, Kim, Kwangeun, Lee, Sin-Hyung, Jang, Jaewon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490495/
https://www.ncbi.nlm.nih.gov/pubmed/37686940
http://dx.doi.org/10.3390/nano13172432

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490495/
https://www.ncbi.nlm.nih.gov/pubmed/37686940
http://dx.doi.org/10.3390/nano13172432

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