Dark Current Analysis on GeSn p-i-n Photodetectors

Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present in GeSn alloys are the major challenge in developing practical devices, owing to the low-temperature growth...

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Detalles Bibliográficos
Autores principales: Ghosh, Soumava, Sun, Greg, Morgan, Timothy A., Forcherio, Gregory T., Cheng, Hung-Hsiang, Chang, Guo-En
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490798/
https://www.ncbi.nlm.nih.gov/pubmed/37687985
http://dx.doi.org/10.3390/s23177531

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10490798/
https://www.ncbi.nlm.nih.gov/pubmed/37687985
http://dx.doi.org/10.3390/s23177531

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