Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

Carbon doping in GaN-on-Silicon (Si) epitaxial layers is an essential way to reduce leakage current and improve breakdown voltage. However, complicated occupy forms caused by carbon lead to hard analysis leakage/breakdown mechanisms of GaN-on-Si epitaxial layers. In this paper, we demonstrate the sp...

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Detalles Bibliográficos
Autores principales: Cao, Weicheng, Song, Chunyan, Liao, Hui, Yang, Ningxuan, Wang, Rui, Tang, Guanghui, Ji, Hongyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10491598/
https://www.ncbi.nlm.nih.gov/pubmed/37684297
http://dx.doi.org/10.1038/s41598-023-41678-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10491598/
https://www.ncbi.nlm.nih.gov/pubmed/37684297
http://dx.doi.org/10.1038/s41598-023-41678-1

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