ALD-grown two-dimensional TiS(x) metal contacts for MoS(2) field-effect transistors

Metal contacts to MoS(2) field-effect transistors (FETs) play a determinant role in the device electrical characteristics and need to be chosen carefully. Because of the Schottky barrier (SB) and the Fermi level pinning (FLP) effects that occur at the contact/MoS(2) interface, MoS(2) FETs often suff...

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Detalles Bibliográficos
Autores principales: Mahlouji, Reyhaneh, Kessels, Wilhelmus M. M. (Erwin), Sagade, Abhay A., Bol, Ageeth A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10496909/
https://www.ncbi.nlm.nih.gov/pubmed/37705798
http://dx.doi.org/10.1039/d3na00387f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10496909/
https://www.ncbi.nlm.nih.gov/pubmed/37705798
http://dx.doi.org/10.1039/d3na00387f

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