Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

[Image: see text] The molecular beam epitaxy (MBE) technique is renowned as the most suitable for the growth of high-quality crystalline materials and nanostructures such as GaAs. However, once established, optimal growth parameters required for repeatability of top-quality structures may be easily...

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Detalles Bibliográficos
Autores principales: Jarosz, Dawid, Stachowicz, Marcin, Krzeminski, Piotr, Ruszala, Marta, Jus, Anna, Sliz, Pawel, Ploch, Dariusz, Marchewka, Michal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10500691/
https://www.ncbi.nlm.nih.gov/pubmed/37720771
http://dx.doi.org/10.1021/acsomega.3c04777

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10500691/
https://www.ncbi.nlm.nih.gov/pubmed/37720771
http://dx.doi.org/10.1021/acsomega.3c04777

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