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Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
In the growing area of neuromorphic and in-memory computing, there are multiple reviews available. Most of them cover a broad range of topics, which naturally comes at the cost of details in specific areas. Here, we address the specific area of multi-level resistive switching in hafnium-oxide-based...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer Nature Singapore
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10501996/ https://www.ncbi.nlm.nih.gov/pubmed/37710080 http://dx.doi.org/10.1186/s40580-023-00392-4 |