Electrical Properties of Anisotype ZnO:Al/n-ZnSe/p-CdTe Heterostructures

[Image: see text] ZnO:Al/n-ZnSe/p-CdTe anisotype heterostructures with diode properties were fabricated by the high-frequency magnetron deposition of ZnO:Al and n-ZnSe thin films onto the surface of crystalline p-CdTe. The flow of currents limited by the space charge at forward voltages up to 0.45 V...

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Detalles Bibliográficos
Autores principales: Maistruk, Eduard V., Orletskyi, Ivan G., Ilashchuk, Maria I., Koziarskyi, Ivan P., Koziarskyi, Dmytro P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10515585/
https://www.ncbi.nlm.nih.gov/pubmed/37744821
http://dx.doi.org/10.1021/acsomega.3c05362

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10515585/
https://www.ncbi.nlm.nih.gov/pubmed/37744821
http://dx.doi.org/10.1021/acsomega.3c05362

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