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Electrical Properties of Anisotype ZnO:Al/n-ZnSe/p-CdTe Heterostructures
[Image: see text] ZnO:Al/n-ZnSe/p-CdTe anisotype heterostructures with diode properties were fabricated by the high-frequency magnetron deposition of ZnO:Al and n-ZnSe thin films onto the surface of crystalline p-CdTe. The flow of currents limited by the space charge at forward voltages up to 0.45 V...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10515585/ https://www.ncbi.nlm.nih.gov/pubmed/37744821 http://dx.doi.org/10.1021/acsomega.3c05362 |