Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5 [Formula: see text] m thick drift layers with a Si doping d...

Descripción completa

Detalles Bibliográficos
Autores principales: Gonçalez Filho, Walter, Borga, Matteo, Geens, Karen, Cingu, Deepthi, Chatterjee, Urmimala, Banerjee, Sourish, Vohra, Anurag, Han, Han, Minj, Albert, Hahn, Herwig, Marx, Matthias, Fahle, Dirk, Bakeroot, Benoit, Decoutere, Stefaan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10517926/
https://www.ncbi.nlm.nih.gov/pubmed/37741914
http://dx.doi.org/10.1038/s41598-023-42747-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10517926/
https://www.ncbi.nlm.nih.gov/pubmed/37741914
http://dx.doi.org/10.1038/s41598-023-42747-1

Ejemplares similares