Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

Emerging data-intensive computation has driven the advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy consumption. Yet a monolithic three-dimensional (3D) integrated structure with interleaved logic and high-density memory layers has been difficult to a...

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Detalles Bibliográficos
Autores principales: Xie, Maosong, Jia, Yueyang, Nie, Chen, Liu, Zuheng, Tang, Alvin, Fan, Shiquan, Liang, Xiaoyao, Jiang, Li, He, Zhezhi, Yang, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10517937/
https://www.ncbi.nlm.nih.gov/pubmed/37741834
http://dx.doi.org/10.1038/s41467-023-41736-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10517937/
https://www.ncbi.nlm.nih.gov/pubmed/37741834
http://dx.doi.org/10.1038/s41467-023-41736-2

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