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A high thermal stability ohmic contact for GaN-based devices
Co-integration of gallium nitride (GaN) power devices with Si logic ICs provides a way of applying high power and high efficiency circuits on a single chip. In order to co-integrate GaN devices with Si ICs, an ohmic contact for GaN devices has to be Si compatible and durable at the same or higher te...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10521205/ https://www.ncbi.nlm.nih.gov/pubmed/37767046 http://dx.doi.org/10.1039/d3na00491k |