Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors

The effect of the channel interface of top-gate InGaZnO (IGZO) thin film transistors (TFTs) on the electrical properties caused by exposure to various wet chemicals such as deionized water, photoresist (PR), and strippers during the photolithography process was studied. Contrary to the good electric...

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Detalles Bibliográficos
Autores principales: Oh, Changyong, Kim, Taehyeon, Ju, Myeong Woo, Kim, Min Young, Park, So Hee, Lee, Geon Hyeong, Kim, Hyunwuk, Kim, SeHoon, Kim, Bo Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10532450/
https://www.ncbi.nlm.nih.gov/pubmed/37763439
http://dx.doi.org/10.3390/ma16186161

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10532450/
https://www.ncbi.nlm.nih.gov/pubmed/37763439
http://dx.doi.org/10.3390/ma16186161

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