Improved Uniformity of TaO(x)-Based Resistive Switching Memory Device by Inserting Thin SiO(2) Layer for Neuromorphic System

RRAM devices operating based on the creation of conductive filaments via the migration of oxygen vacancies are widely studied as promising candidates for next-generation memory devices due to their superior memory characteristics. However, the issues of variation in the resistance state and operatin...

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Detalles Bibliográficos
Autores principales: Ju, Dongyeol, Kim, Sunghun, Jang, Junwon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10532643/
https://www.ncbi.nlm.nih.gov/pubmed/37763413
http://dx.doi.org/10.3390/ma16186136

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10532643/
https://www.ncbi.nlm.nih.gov/pubmed/37763413
http://dx.doi.org/10.3390/ma16186136

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