Investigation of the Fabrication of Diamond/SiC Composites Using α-Si(3)N(4)/Si Infiltration

Diamond/SiC (Dia/SiC) composites possess excellent properties, such as high thermal conductivity and low thermal expansion coefficient. In addition, they are suitable as electronic packaging materials. This study mainly optimized the diamond particle size packing and liquid-phase silicon infiltration processes and investigated a method to prevent the adhesion of the product to molten silicon. Based on the Dinger–Funk particle stacking theory, a multiscale diamond ratio optimization model was established, and the volume ratio of diamond particles with sizes of D20, D50, and D90 was optimized as 1:3:6. The method of pressureless silicon infiltration and the formulas of the composites were investigated. The influences of bedding powder on phase composition and microstructure were studied using X-ray diffraction and scanning electron microscopy, and the optimal parameters were obtained. The porosity of the preform was controlled by regulating the feeding amount through constant volume molding. Dia/SiC-8 exhibited the highest density of 2.73 g/cm(3) and the lowest porosity of 0.6%. To avoid adhesion between the sample and buried powder with the bedding silicon powder, a mixed powder of α-Si(3)N(4) and silicon was used as the buried powder and the related mechanisms of action were discussed.