Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications

The bipolar resistive switching properties of Pt/TaO(x)/InO(x)/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical composi...

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Detalles Bibliográficos
Autores principales: Ju, Dongyeol, Kim, Sunghun, Lee, Subaek, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10533022/
https://www.ncbi.nlm.nih.gov/pubmed/37763461
http://dx.doi.org/10.3390/ma16186184

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10533022/
https://www.ncbi.nlm.nih.gov/pubmed/37763461
http://dx.doi.org/10.3390/ma16186184

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