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Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications

The bipolar resistive switching properties of Pt/TaO(x)/InO(x)/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical composi...

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Autores principales: Ju, Dongyeol, Kim, Sunghun, Lee, Subaek, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10533022/
https://www.ncbi.nlm.nih.gov/pubmed/37763461
http://dx.doi.org/10.3390/ma16186184
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author Ju, Dongyeol
Kim, Sunghun
Lee, Subaek
Kim, Sungjun
author_facet Ju, Dongyeol
Kim, Sunghun
Lee, Subaek
Kim, Sungjun
author_sort Ju, Dongyeol
collection PubMed
description The bipolar resistive switching properties of Pt/TaO(x)/InO(x)/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical compositions of the devices. A unique two-step forming process referred to as the double-forming phenomenon and self-compliance characteristics are demonstrated under a DC sweep. A model based on oxygen vacancy migration is proposed to explain its conduction mechanism. Varying reset voltages and compliance currents were applied to evaluate multilevel cell characteristics. Furthermore, pulses were applied to the devices to demonstrate the neuromorphic system’s application via testing potentiation, depression, spike-timing-dependent plasticity, and spike-rate-dependent plasticity.
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spelling pubmed-105330222023-09-28 Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications Ju, Dongyeol Kim, Sunghun Lee, Subaek Kim, Sungjun Materials (Basel) Article The bipolar resistive switching properties of Pt/TaO(x)/InO(x)/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical compositions of the devices. A unique two-step forming process referred to as the double-forming phenomenon and self-compliance characteristics are demonstrated under a DC sweep. A model based on oxygen vacancy migration is proposed to explain its conduction mechanism. Varying reset voltages and compliance currents were applied to evaluate multilevel cell characteristics. Furthermore, pulses were applied to the devices to demonstrate the neuromorphic system’s application via testing potentiation, depression, spike-timing-dependent plasticity, and spike-rate-dependent plasticity. MDPI 2023-09-13 /pmc/articles/PMC10533022/ /pubmed/37763461 http://dx.doi.org/10.3390/ma16186184 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ju, Dongyeol
Kim, Sunghun
Lee, Subaek
Kim, Sungjun
Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title_full Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title_fullStr Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title_full_unstemmed Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title_short Double-Forming Mechanism of TaO(x)-Based Resistive Memory Device and Its Synaptic Applications
title_sort double-forming mechanism of tao(x)-based resistive memory device and its synaptic applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10533022/
https://www.ncbi.nlm.nih.gov/pubmed/37763461
http://dx.doi.org/10.3390/ma16186184
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