Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Two-dimensional (2D) black phosphorus (BP) is considered an ideal building block for field-effect transistors (FETs) owing to its unique structure and intriguing properties. To achieve high-performance BP-FETs, it is essential to establish a reliable and low-resistance contact between the BP and the...

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Detalles Bibliográficos
Autores principales: Shi, Fangyuan, Gao, Shengguang, Li, Qichao, Zhang, Yanming, Zhang, Teng, He, Zhiyan, Wang, Kunchan, Ye, Xiaowo, Liu, Jichao, Jiang, Shenghao, Chen, Changxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10534629/
https://www.ncbi.nlm.nih.gov/pubmed/37764636
http://dx.doi.org/10.3390/nano13182607

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10534629/
https://www.ncbi.nlm.nih.gov/pubmed/37764636
http://dx.doi.org/10.3390/nano13182607

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