SnO(2)-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing

In this study, we fabricate a Pt/TiN/SnO(x)/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO(2), acts as an oxygen vacancy reservoir, aiding the creation of conductive filaments in th...

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Detalles Bibliográficos
Autores principales: Ismail, Muhammad, Mahata, Chandreswar, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535130/
https://www.ncbi.nlm.nih.gov/pubmed/37764635
http://dx.doi.org/10.3390/nano13182603

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535130/
https://www.ncbi.nlm.nih.gov/pubmed/37764635
http://dx.doi.org/10.3390/nano13182603

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