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SnO(2)-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
In this study, we fabricate a Pt/TiN/SnO(x)/Pt memory device using reactive sputtering to explore its potential for neuromorphic computing. The TiON interface layer, formed when TiN comes into contact with SnO(2), acts as an oxygen vacancy reservoir, aiding the creation of conductive filaments in th...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535130/ https://www.ncbi.nlm.nih.gov/pubmed/37764635 http://dx.doi.org/10.3390/nano13182603 |