Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor †

In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage ([Formula: see text]) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant statistical differences betw...

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Detalles Bibliográficos
Autores principales: Chao, Calvin Yi-Ping, Wu, Thomas Meng-Hsiu, Yeh, Shang-Fu, Lee, Chih-Lin, Tu, Honyih, Huang, Joey Chiao-Yi, Chang, Chin-Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535337/
https://www.ncbi.nlm.nih.gov/pubmed/37766015
http://dx.doi.org/10.3390/s23187959

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535337/
https://www.ncbi.nlm.nih.gov/pubmed/37766015
http://dx.doi.org/10.3390/s23187959

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