Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor †

In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage ([Formula: see text]) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant statistical differences betw...

Descripción completa

Detalles Bibliográficos
Autores principales: Chao, Calvin Yi-Ping, Wu, Thomas Meng-Hsiu, Yeh, Shang-Fu, Lee, Chih-Lin, Tu, Honyih, Huang, Joey Chiao-Yi, Chang, Chin-Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535337/
https://www.ncbi.nlm.nih.gov/pubmed/37766015
http://dx.doi.org/10.3390/s23187959

Ejemplares similares

Ejemplares similares