Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors

High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium–oxide (InO(x)) semiconductors using a solution process for hi...

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Detalles Bibliográficos
Autores principales: Park, Jun-Hyeong, Park, Won, Na, Jeong-Hyeon, Lee, Jinuk, Eun, Jun-Su, Feng, Junhao, Kim, Do-Kyung, Bae, Jin-Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536517/
https://www.ncbi.nlm.nih.gov/pubmed/37764597
http://dx.doi.org/10.3390/nano13182568

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536517/
https://www.ncbi.nlm.nih.gov/pubmed/37764597
http://dx.doi.org/10.3390/nano13182568

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