Cargando…
Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536889/ https://www.ncbi.nlm.nih.gov/pubmed/37766032 http://dx.doi.org/10.3390/s23187977 |