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Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536889/ https://www.ncbi.nlm.nih.gov/pubmed/37766032 http://dx.doi.org/10.3390/s23187977 |
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author | Vetrova, Natalia Kuimov, Evgeny Sinyakin, Vladimir Meshkov, Sergey Makeev, Mstislav Shashurin, Vasiliy |
author_facet | Vetrova, Natalia Kuimov, Evgeny Sinyakin, Vladimir Meshkov, Sergey Makeev, Mstislav Shashurin, Vasiliy |
author_sort | Vetrova, Natalia |
collection | PubMed |
description | This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes. |
format | Online Article Text |
id | pubmed-10536889 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-105368892023-09-29 Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel Vetrova, Natalia Kuimov, Evgeny Sinyakin, Vladimir Meshkov, Sergey Makeev, Mstislav Shashurin, Vasiliy Sensors (Basel) Article This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes. MDPI 2023-09-19 /pmc/articles/PMC10536889/ /pubmed/37766032 http://dx.doi.org/10.3390/s23187977 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Vetrova, Natalia Kuimov, Evgeny Sinyakin, Vladimir Meshkov, Sergey Makeev, Mstislav Shashurin, Vasiliy Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title_full | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title_fullStr | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title_full_unstemmed | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title_short | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
title_sort | bistability of algaas/gaas resonant-tunneling diodes heterostructural channel |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536889/ https://www.ncbi.nlm.nih.gov/pubmed/37766032 http://dx.doi.org/10.3390/s23187977 |
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