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Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability...

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Detalles Bibliográficos
Autores principales: Vetrova, Natalia, Kuimov, Evgeny, Sinyakin, Vladimir, Meshkov, Sergey, Makeev, Mstislav, Shashurin, Vasiliy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536889/
https://www.ncbi.nlm.nih.gov/pubmed/37766032
http://dx.doi.org/10.3390/s23187977
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author Vetrova, Natalia
Kuimov, Evgeny
Sinyakin, Vladimir
Meshkov, Sergey
Makeev, Mstislav
Shashurin, Vasiliy
author_facet Vetrova, Natalia
Kuimov, Evgeny
Sinyakin, Vladimir
Meshkov, Sergey
Makeev, Mstislav
Shashurin, Vasiliy
author_sort Vetrova, Natalia
collection PubMed
description This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.
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spelling pubmed-105368892023-09-29 Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel Vetrova, Natalia Kuimov, Evgeny Sinyakin, Vladimir Meshkov, Sergey Makeev, Mstislav Shashurin, Vasiliy Sensors (Basel) Article This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes. MDPI 2023-09-19 /pmc/articles/PMC10536889/ /pubmed/37766032 http://dx.doi.org/10.3390/s23187977 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Vetrova, Natalia
Kuimov, Evgeny
Sinyakin, Vladimir
Meshkov, Sergey
Makeev, Mstislav
Shashurin, Vasiliy
Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title_full Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title_fullStr Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title_full_unstemmed Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title_short Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
title_sort bistability of algaas/gaas resonant-tunneling diodes heterostructural channel
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536889/
https://www.ncbi.nlm.nih.gov/pubmed/37766032
http://dx.doi.org/10.3390/s23187977
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