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Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition

[Image: see text] Gallia-based shells with a thickness varying from a submonolayer to ca. 2.5 nm were prepared by atomic layer deposition (ALD) using trimethylgallium, ozone, and partially dehydroxylated silica, followed by calcination at 500 °C. Insight into the atomic-scale structure of these shel...

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Detalles Bibliográficos
Autores principales: Chen, Zixuan, Zimmerli, Nora K., Zubair, Muhammad, Yakimov, Alexander V., Björgvinsdóttir, Snædís, Alaniva, Nicholas, Willinger, Elena, Barnes, Alexander B., Bedford, Nicholas M., Copéret, Christophe, Florian, Pierre, Abdala, Paula M., Fedorov, Alexey, Müller, Christoph R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536998/
https://www.ncbi.nlm.nih.gov/pubmed/37780414
http://dx.doi.org/10.1021/acs.chemmater.3c00923