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Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition

[Image: see text] Gallia-based shells with a thickness varying from a submonolayer to ca. 2.5 nm were prepared by atomic layer deposition (ALD) using trimethylgallium, ozone, and partially dehydroxylated silica, followed by calcination at 500 °C. Insight into the atomic-scale structure of these shel...

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Autores principales: Chen, Zixuan, Zimmerli, Nora K., Zubair, Muhammad, Yakimov, Alexander V., Björgvinsdóttir, Snædís, Alaniva, Nicholas, Willinger, Elena, Barnes, Alexander B., Bedford, Nicholas M., Copéret, Christophe, Florian, Pierre, Abdala, Paula M., Fedorov, Alexey, Müller, Christoph R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536998/
https://www.ncbi.nlm.nih.gov/pubmed/37780414
http://dx.doi.org/10.1021/acs.chemmater.3c00923
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author Chen, Zixuan
Zimmerli, Nora K.
Zubair, Muhammad
Yakimov, Alexander V.
Björgvinsdóttir, Snædís
Alaniva, Nicholas
Willinger, Elena
Barnes, Alexander B.
Bedford, Nicholas M.
Copéret, Christophe
Florian, Pierre
Abdala, Paula M.
Fedorov, Alexey
Müller, Christoph R.
author_facet Chen, Zixuan
Zimmerli, Nora K.
Zubair, Muhammad
Yakimov, Alexander V.
Björgvinsdóttir, Snædís
Alaniva, Nicholas
Willinger, Elena
Barnes, Alexander B.
Bedford, Nicholas M.
Copéret, Christophe
Florian, Pierre
Abdala, Paula M.
Fedorov, Alexey
Müller, Christoph R.
author_sort Chen, Zixuan
collection PubMed
description [Image: see text] Gallia-based shells with a thickness varying from a submonolayer to ca. 2.5 nm were prepared by atomic layer deposition (ALD) using trimethylgallium, ozone, and partially dehydroxylated silica, followed by calcination at 500 °C. Insight into the atomic-scale structure of these shells was obtained by high-field (71)Ga solid-state nuclear magnetic resonance (NMR) experiments and the modeling of X-ray differential pair distribution function data, complemented by Ga K-edge X-ray absorption spectroscopy and (29)Si dynamic nuclear polarization surface enhanced NMR spectroscopy (DNP SENS) studies. When applying one ALD cycle, the grown submonolayer contains mostly tetracoordinate Ga sites with Si atoms in the second coordination sphere (([4])Ga((Si))) and, according to (15)N DNP SENS using pyridine as the probe molecule, both strong Lewis acid sites (LAS) and strong Brønsted acid sites (BAS), consistent with the formation of gallosilicate Ga–O–Si and Ga–μ(2)-OH–Si species. The shells obtained using five and ten ALD cycles display characteristics of amorphous gallia (GaO(x)), i.e., an increased relative fraction of pentacoordinate sites (([5])Ga((Ga))), the presence of mild LAS, and a decreased relative abundance of strong BAS. The prepared Ga1-, Ga5-, and Ga10-SiO(2–500) materials catalyze the dehydrogenation of isobutane to isobutene, and their catalytic performance correlates with the relative abundance and strength of LAS and BAS, viz., Ga1-SiO(2–500), a material with a higher relative fraction of strong LAS, is more active and stable compared to Ga5- and Ga10-SiO(2–500). In contrast, related ALD-derived Al1-, Al5-, and Al10-SiO(2–500) materials do not catalyze the dehydrogenation of isobutane and this correlates with the lack of strong LAS in these materials that instead feature abundant strong BAS formed via the atomic-scale mixing of Al sites with silica, leading to Al–μ(2)-OH–Si sites. Our results suggest that ([4])Ga((Si)) sites provide strong Lewis acidity and drive the dehydrogenation activity, while the appearance of ([5])Ga((Ga)) sites with mild Lewis activity is associated with catalyst deactivation through coking. Overall, the atomic-level insights into the structure of the GaO(x)-based materials prepared in this work provide a guide to design active Ga-based catalysts by a rational tailoring of Lewis and Brønsted acidity (nature, strength, and abundance).
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spelling pubmed-105369982023-09-29 Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition Chen, Zixuan Zimmerli, Nora K. Zubair, Muhammad Yakimov, Alexander V. Björgvinsdóttir, Snædís Alaniva, Nicholas Willinger, Elena Barnes, Alexander B. Bedford, Nicholas M. Copéret, Christophe Florian, Pierre Abdala, Paula M. Fedorov, Alexey Müller, Christoph R. Chem Mater [Image: see text] Gallia-based shells with a thickness varying from a submonolayer to ca. 2.5 nm were prepared by atomic layer deposition (ALD) using trimethylgallium, ozone, and partially dehydroxylated silica, followed by calcination at 500 °C. Insight into the atomic-scale structure of these shells was obtained by high-field (71)Ga solid-state nuclear magnetic resonance (NMR) experiments and the modeling of X-ray differential pair distribution function data, complemented by Ga K-edge X-ray absorption spectroscopy and (29)Si dynamic nuclear polarization surface enhanced NMR spectroscopy (DNP SENS) studies. When applying one ALD cycle, the grown submonolayer contains mostly tetracoordinate Ga sites with Si atoms in the second coordination sphere (([4])Ga((Si))) and, according to (15)N DNP SENS using pyridine as the probe molecule, both strong Lewis acid sites (LAS) and strong Brønsted acid sites (BAS), consistent with the formation of gallosilicate Ga–O–Si and Ga–μ(2)-OH–Si species. The shells obtained using five and ten ALD cycles display characteristics of amorphous gallia (GaO(x)), i.e., an increased relative fraction of pentacoordinate sites (([5])Ga((Ga))), the presence of mild LAS, and a decreased relative abundance of strong BAS. The prepared Ga1-, Ga5-, and Ga10-SiO(2–500) materials catalyze the dehydrogenation of isobutane to isobutene, and their catalytic performance correlates with the relative abundance and strength of LAS and BAS, viz., Ga1-SiO(2–500), a material with a higher relative fraction of strong LAS, is more active and stable compared to Ga5- and Ga10-SiO(2–500). In contrast, related ALD-derived Al1-, Al5-, and Al10-SiO(2–500) materials do not catalyze the dehydrogenation of isobutane and this correlates with the lack of strong LAS in these materials that instead feature abundant strong BAS formed via the atomic-scale mixing of Al sites with silica, leading to Al–μ(2)-OH–Si sites. Our results suggest that ([4])Ga((Si)) sites provide strong Lewis acidity and drive the dehydrogenation activity, while the appearance of ([5])Ga((Ga)) sites with mild Lewis activity is associated with catalyst deactivation through coking. Overall, the atomic-level insights into the structure of the GaO(x)-based materials prepared in this work provide a guide to design active Ga-based catalysts by a rational tailoring of Lewis and Brønsted acidity (nature, strength, and abundance). American Chemical Society 2023-08-28 /pmc/articles/PMC10536998/ /pubmed/37780414 http://dx.doi.org/10.1021/acs.chemmater.3c00923 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Chen, Zixuan
Zimmerli, Nora K.
Zubair, Muhammad
Yakimov, Alexander V.
Björgvinsdóttir, Snædís
Alaniva, Nicholas
Willinger, Elena
Barnes, Alexander B.
Bedford, Nicholas M.
Copéret, Christophe
Florian, Pierre
Abdala, Paula M.
Fedorov, Alexey
Müller, Christoph R.
Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title_full Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title_fullStr Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title_full_unstemmed Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title_short Nature of GaO(x) Shells Grown on Silica by Atomic Layer Deposition
title_sort nature of gao(x) shells grown on silica by atomic layer deposition
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536998/
https://www.ncbi.nlm.nih.gov/pubmed/37780414
http://dx.doi.org/10.1021/acs.chemmater.3c00923
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