Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution

This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material. AC impedance spectroscopy is employed as a reliable technique to characteri...

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Detalles Bibliográficos
Autores principales: Hall, Michael J., Vashaee, Daryoosh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537245/
https://www.ncbi.nlm.nih.gov/pubmed/37763964
http://dx.doi.org/10.3390/mi14091801

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537245/
https://www.ncbi.nlm.nih.gov/pubmed/37763964
http://dx.doi.org/10.3390/mi14091801

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