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Microscale Engineering of n-Type Doping in Nanostructured Gallium Antimonide: AC Impedance Spectroscopy Insights on Grain Boundary Characterization and Strategies for Controlled Dopant Distribution
This paper investigates the microscale engineering aspects of n-type doped GaSb to address the challenges associated with achieving high electrical conductivity and precise dopant distribution in this semiconductor material. AC impedance spectroscopy is employed as a reliable technique to characteri...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537245/ https://www.ncbi.nlm.nih.gov/pubmed/37763964 http://dx.doi.org/10.3390/mi14091801 |