Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly incr...

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Detalles Bibliográficos
Autores principales: Lottigier, Pierre, Di Paola, Davide Maria, Alexander, Duncan T. L., Weatherley, Thomas F. K., Sáenz de Santa María Modroño, Pablo, Chen, Danxuan, Jacopin, Gwénolé, Carlin, Jean-François, Butté, Raphaël, Grandjean, Nicolas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537355/
https://www.ncbi.nlm.nih.gov/pubmed/37764598
http://dx.doi.org/10.3390/nano13182569

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537355/
https://www.ncbi.nlm.nih.gov/pubmed/37764598
http://dx.doi.org/10.3390/nano13182569

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