Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO(2) Resistive Random Access Memories to Address Device Variability

[Image: see text] Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which origina...

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Detalles Bibliográficos
Autores principales: Swoboda, Timm, Gao, Xing, Rosário, Carlos M. M., Hui, Fei, Zhu, Kaichen, Yuan, Yue, Deshmukh, Sanchit, Köroǧlu, Çaǧıl, Pop, Eric, Lanza, Mario, Hilgenkamp, Hans, Rojo, Miguel Muñoz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537448/
https://www.ncbi.nlm.nih.gov/pubmed/37779889
http://dx.doi.org/10.1021/acsaelm.3c00782

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537448/
https://www.ncbi.nlm.nih.gov/pubmed/37779889
http://dx.doi.org/10.1021/acsaelm.3c00782

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