Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was stud...

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Detalles Bibliográficos
Autores principales: Olszewski, Karol, Sobanska, Marta, Dubrovskii, Vladimir G., Leshchenko, Egor D., Wierzbicka, Aleksandra, Zytkiewicz, Zbigniew R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537475/
https://www.ncbi.nlm.nih.gov/pubmed/37764616
http://dx.doi.org/10.3390/nano13182587

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537475/
https://www.ncbi.nlm.nih.gov/pubmed/37764616
http://dx.doi.org/10.3390/nano13182587

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