CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candi...

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Detalles Bibliográficos
Autores principales: Wang, Wenhui, Li, Ke, Lan, Jun, Shen, Mei, Wang, Zhongrui, Feng, Xuewei, Yu, Hongyu, Chen, Kai, Li, Jiamin, Zhou, Feichi, Lin, Longyang, Zhang, Panpan, Li, Yida
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10539278/
https://www.ncbi.nlm.nih.gov/pubmed/37770482
http://dx.doi.org/10.1038/s41467-023-41868-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10539278/
https://www.ncbi.nlm.nih.gov/pubmed/37770482
http://dx.doi.org/10.1038/s41467-023-41868-5

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