Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors

[Image: see text] Bottom-up synthesized graphene nanoribbons (GNRs) are increasingly attracting interest due to their atomically controlled structure and customizable physical properties. In recent years, a range of GNR-based field-effect transistors (FETs) has been fabricated, with several demonstr...

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Detalles Bibliográficos
Autores principales: Zhang, Jian, Barin, Gabriela Borin, Furrer, Roman, Du, Cheng-Zhuo, Wang, Xiao-Ye, Müllen, Klaus, Ruffieux, Pascal, Fasel, Roman, Calame, Michel, Perrin, Mickael L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10540264/
https://www.ncbi.nlm.nih.gov/pubmed/37671914
http://dx.doi.org/10.1021/acs.nanolett.3c01931

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10540264/
https://www.ncbi.nlm.nih.gov/pubmed/37671914
http://dx.doi.org/10.1021/acs.nanolett.3c01931

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