Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

In this paper, we present a new novel simple iTFET with overlapping gate on source-contact (SGO), Drain Schottky Contact, and intrinsic SiGe pocket (Pocket-SGO iTFET). The aim is to achieve steep subthreshold swing (S.S) and high I(ON) current. By optimizing the gate and source-contact overlap, the...

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Detalles Bibliográficos
Autores principales: Lin, Jyi-Tsong, Lin, Kuan-Pin, Cheng, Kai-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10541387/
https://www.ncbi.nlm.nih.gov/pubmed/37773549
http://dx.doi.org/10.1186/s11671-023-03904-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10541387/
https://www.ncbi.nlm.nih.gov/pubmed/37773549
http://dx.doi.org/10.1186/s11671-023-03904-7

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