Cargando…
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n(+)-drain is presented in this paper. Two highly-doped p(+) silicon layers are devised to induce holes in an intrinsic source region. Due to employing a double gate configuration and Hafnium in th...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10556149/ https://www.ncbi.nlm.nih.gov/pubmed/37798400 http://dx.doi.org/10.1038/s41598-023-44096-5 |