Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys

[Image: see text] Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility, making it suitable for IR-range optoelectronics and high-frequency transistors. However, the development of InN-based electronics is hampered by the metastable nature of InN. The decompositi...

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Detalles Bibliográficos
Autores principales: Pedersen, Henrik, Hsu, Chih-Wei, Nepal, Neeraj, Woodward, Jeffrey M., Eddy, Charles R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10557049/
https://www.ncbi.nlm.nih.gov/pubmed/37808904
http://dx.doi.org/10.1021/acs.cgd.3c00775

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10557049/
https://www.ncbi.nlm.nih.gov/pubmed/37808904
http://dx.doi.org/10.1021/acs.cgd.3c00775

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