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Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
[Image: see text] Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility, making it suitable for IR-range optoelectronics and high-frequency transistors. However, the development of InN-based electronics is hampered by the metastable nature of InN. The decompositi...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10557049/ https://www.ncbi.nlm.nih.gov/pubmed/37808904 http://dx.doi.org/10.1021/acs.cgd.3c00775 |